Texas Instruments (TI) uses rotary thermal oxidizers (RTOs) for the reduction of VOC emissions, which produce NOx. The mixed volatile organic compound (VOC) streams cause periodic plugging of the packing material which inhibits the ability to maintain long-term oxidizer performance. TI and Matros Technologies (MT) partnered to reduce NOx emissions and improve long-term destruction performance and energy recuperation in the RTOs handling VOCs from TI's semiconductor manufacturing facilities (wafer fabs).
Working together, the companies installed the MT copper-chromium oxidation catalyst as an upper layer in the RTOs of three of TI's Dallas wafer fabs, converting them to regenerative catalytic oxidizers (RCOs). The RCO operates using 50-60% less fuel and generate about 45% less NOx from this operation which is located in the DFW non-attainment area. Green House Gases (GHG) have been reduced by 49% from this operation. Additionally, the four-year life of the catalyst has reduced maintenance activities and packing material disposal by 63.9%.
Details of Reductions
Additional Information :
NOx emissions from all three of these RTOs were permitted and additional emission controls for this application are not anticipated. TI meets both BACT and LAER standards for this source. Nonetheless, in an effort to address the community concerns about DFW air quality, TI took the leadership to test this technology. The formation of silica in the oxidation process and its deposit on RTO packing material has plagued our industry since the first application of RTOs to VOC emission streams. The collaboration between Texas Instruments and Matros Technologies has successfully reduced air emissions and material disposal at Texas Instruments and can be applied at similar facilities globally throughout the industry. TI presented this information at the International SEMATECH Manufacturing Initiative in order to share this good news throughout the industry. Additionally, TI and MT published a recent article in Pollution Engineering's November 2009 issue depicting one of the systems as a semiconductor case study.